Research for physics and chemistry doping of semi-conductor, oxide, fluoride crystals, glass-shaped and High temperature superconductive materials. Study for the nature, parameters of forming solid solutions and structural defects, phase composition of the material, their effects both on electrophysical, optical, dielectrical and mechanical properties and on structural parameters of the material;
Research of degradation parameters and properties of semiconductor, laser, optical, dielectrical, ceramical, electric insulating products spontaneously, in the field of radiation-thermal effect and exposing them by radiation sensitivity.
Development for theoretical models of formation defects for various kinds(forms) of crystals and products under radiation effect;
The modification and stabilization properties of semiconductor, optical, laser, dielectrical crystals and products by radiation technology and radiation-thermal treatment. Carrying out the transmutantive doping of silicon monocrystals by helping neutron irradiation. The synthesis and thermo-radiation treatment of High temperature supercon-ductive materials in the field of gamma-radiation.
|Laboratory of semiconductor electronics physics and engineering|
|Radiation physics laboratory of semiconductors|
|Laboratory of structural transformation in solid state materials|
|Laboratory of nanostructural and superconducting materials physics|
|Radiation processes laboratory in dielectric materials|
|Scientific instrument making laboratory|