Raw mineral analysis laboratory

Head of laboratory
doctor of technical sciences

Bakiev Saydamin Alimovich

Laboratory researches areas

Laboratory conducts the research on development neutron activation analysis methods of mineral raw samples(rocks, ores and their reprocessing products, hydro-geological samples and so on).

Rare metals electrochemistry laboratory

Head of laboratory
candidate of technical sciences

Egamediev Serik Khujamberdyevich

The basic researches areas

Research and development of obtaining technology of pure metals and alloys, nuclear targets and sealed radioactive radiation sources.

The basic activity results for the last 5 years

The chemical and physical methods of obtaining the tellurium containing basic material no more than 99,995 % have been developed, technical conditions for sealed point radioactive radiation sources with radionuclide cobalt-57 has been formalized.

Laboratory developments

High purity tellurium obtaining method. The high-pure tellurium are demonstrated on the exhibitions in the republic and in abroad.

Leading staff

Radiation Physics Department of Optical materials

Head of department:

Ashurov Mukhsin Khurramovich

The main areas of investigations

  • Spectroscopy of radiation-modificated defects in laser materials.
  • Radiation modification structure and properties of multicomponent optical materials

The main activity results for the last  5 years

Scientific instrument making laboratory

Head of Scientific Instrument making department:
doctor of technical sciences

Khaydarov Rashid Abdulkhaevich

Radiation processes laboratory in dielectric materials

Head of laboratory

doctor of physics and math

Nuritdinov Izzatillo

The basic researches areas

Radiation physics of oxide and fluoride crystals as well as, disordered solid state materials.

Laboratory of structural transformation in solid state materials

Laboratory of structural transformation in solid state materials

Head of the laboratory:

Doctor of sciences in physics and mathematics

professor Khidirov Irisali Gazievich

Office phone: (998-71)-289-34-64
e-mail: khidirov@inp.uz

Phase transitions physics laboratory

Head of laboratory
кcandidate of physics and math.

Kalanov Mahkmud Umarjonovich

Basic researches areas

  • Condensed-matter physics at low temperatures;
  • The real structure and physical properties of crystals, crystal films and surfaces; superconductivity.

Radiation physics laboratory of semiconductors

Head of laboratory:
doctor of physics and math.

Karimov Makhamadali

Research activity

In the laboratory:

Laboratory of semiconductor electronics physics and engineering

Laboratory of semiconductor electronics physics and engineering

Head of laboratory
Makhkamov Shermakhmat Makhkamovich
Office phone:

email: makhkamov@inp.uz

The basic research areas
  • Physics and technology of semiconductors
  • Solid state radiation physics
  • Radiation technology of semiconductors

Carrying out researches
The regularities of thermal-radiation stimulated processes have been researched and introduction technology of stabilizing replenishes for improving characteristics of monocrystal semiconductor materials(silicon) to external influences has been developed.
The types and parameters of impurity, thermal and radiation defect states formed in the doped silicon single crystals and pn structures based on them , as well as the interaction mechanism of stabilizers with structural defects formed at the external influences are studied.
The regulators can be put into operation by three methods: in the process of silicon monocrystals growth, thermal diffusion and neutron transmutation in crystals in concentration range 1012 - 1016 см-3 . At introduction the admixture of mechanical properties of materials are kept without changes, but electro-physical, photoelectrical, and optical properties can be regulated under the given program.
The obtaining technology of solid sources with regulating admixtures, allowing to product homogeneous doping plates of monocrystal silicon of thermal diffusion has been offered. The tests on radiation effect of semiconductor materials and products on their basis have been conducted.
The computer simulation method are developed on the basis non-conventional tight-binding (NTB) method proposed laboratory staff and molecular dynamics method for studying the nanostructures cluster and defect states in solids , as well as the dynamics of these systems affected by external influences.

Used methods:
  • Electrical
  • Photo electrical
  • Spectrometric
  • Structural
  • Nuclear-analytical
  • Computer modelling

Experimental base of laboratory
 The linear accelerator "Electronics U- 003 " with energy accelerating electrons up to 6 MeV is put into operation. The accelerator is meant to study the influence of electron bremsstrahlung(deceleration radiation) on the properties and characteristics of various materials, products and radiation modification of their properties and characteristics.
 The upgraded infrared microscope MIC- 1 based on computer

The installation DLTS ( Deep-level transient spectroscopy)

The installation of the equipment and instruments for obtaining the p- n structures, measuring the electro-physical, photoelectric, recombination and other parameters and characteristics of semiconductor materials and products based on them.

The basic publications
  • A.P. Mukhtarov , A. B. Normurodov, N.T. Sulaymonov, F.T. Umarova. Charge States of Bare Silicon Clusters up to Si8 by Non-Conventional Tight-Binding Method. J. Nano- Electron. Phys. V. 7, No 1, pp.01012-1-01012-7, (2015).
  • Sh. Makhkamov, R.A. Muminov, M. Karimov, N.A.Tursunov, A.R.Sattiev, M.N.Erdonov, Kh.M. Kholmedov. Influence of the Conductivity Type of Silicon on the Process of Radiation Degradation of Solar Sells. – Applied Solar Energy, 2013, Vol.49, No 2, pp.62-66.
  • Ш.Махкамов, Р.А.Муминов, М.Каримов, Н.А.Турсунов, А.Р.Саттиев, М.Н.Эрдонов, Х.М.Холмедов. Влияние типа проводимости кремния на процесс радиационной деградации солнечных элементов. – Международный журнал «Гелиотехника» , 2013 В. 2, стр. 2-7.
  • Ш.Махкамов, Р.А.Муминов, М.Каримов, К.П.Абдурахманов, Н.А Турсунов, А.Р.Саттиев, М.Н. Эрдонов, Х.М.Холмедов. Формирование радиационных дефектов в кремниевых солнечных элементах, легированных цинком. – Международный журнал «Гелиотехника» , 2013, В.4.
  • P.L. Tereshchuk and J. L. F. Da Silva. Density Functional Investigation of the Adsorption of Ethanol–Water Mixture on the Pt (111) Surface, J. Phys. Chem. C, 2013, 117 (33), pp 16942–16952.
  • M.Yu.Tashmetov, V.T.Em, Sh.Makhkamov, N.B.Ismatov, C.H.Lee, Y.N.Choi, A.D.Pogrebnjak, U.H.Kalandarov. Neutron Difraction Stydi of Ordered Structures and Phase Transitions in Vanadium Subcarbide. –Journal of Nano- and Electronics Physics. 2013, Vol.5, No 1, pp.1018-1-4.
  • F. T. Umarova, A. B. Normurodov and N. N. Turaeva. Size-dependent structural properties of quasi-one-dimensional silicon clusters. Physica status solidi (c), Volume 9, Issue 10-11, pages 1904–1907, 2012.
  • F.T. Umarova, P.L. Tereshchuk, and A.B. Normurodov. Quasi-One-Dimensional Silicon Clusters as Elements of Novel Nanowires. Nanodevices and Nanomaterials for Ecological Security, NATO Science for Peace and Security Series B: Physics and Biophysics, Part 1, pp.143-148, 2012.
  • Ш.Махкамов, Н.А.Турсунов, М.Каримов, С.Зайнабидинов, А.Р.Саттиев, М.Н.Эрдонов. Х.М.Холмедов. Исследование электрофизических свойств и структуры примесно-дефектных комплексов в кремнии, легированном палладием. - Известия ВУЗов, Физика, 2010, № 5, С.59-63.
  • F.T.Umarova, P.L.Tereschuk, A.B.Normurodov. The stability of hollow silicon nanoclusters. Uzbek Journal of Physics, V12, N3, 2010, pp. 117-120.
  • М.Каримов, Ш.Махкамов, Н.А.Турсунов, Ш.А.Махмудов, К.А.Бегматов, А. Карахаджаев, А.У.Садиков. Кинетика релаксации фотопроводимости кремния р-типа, компенсированном атомами фосфора. – Известия ВУЗов, Физика, 2009, №5. стр. 9-12.
  • Umarova F.T., Mukhtarov A.P.,Tereshuk P.L., Sulaymanov N.T., Normurodov A.B., Swihart M.T. Quantum chemical investigation of the hollow nano-sized silicon clusters, Uzbek Journal of Physics, V11, N4, 2009, pp.268-272.